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0024__ NPN un PNP tranzistora testeris - var pārbaudīt neizlodētas detaļas = kp103 mp42b d9. INFO analogi: INFO cena padomju rubļos 1987.
MOSFET Cross-Reference Search 2SK2843 Datasheet (PDF) 1.1. Size:411K _toshiba 2SK2843 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2843 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 0.54?
(typ.) (ON) High forward transfer admittance: Y = 9.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 600 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.1. Size:408K _toshiba 2SK2846 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2846 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 4.2? (typ.) (ON) High forward transfer admittance: Y = 1.7 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 600 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 4.2. Size:417K _toshiba 2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2841 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) High forward transfer admittance: Yfs = 8.0 S (typ.) Low leakage current: IDSS = 100?A (max) (VDS = 400 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 4.3. Size:426K _toshiba 2SK2844 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2844 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance: R = 16 m?
(typ.) DS (ON) High forward transfer admittance: Y = 26 S (typ.) fs Low leakage current: IDSS = 100 µA (max) (V = 30 V) DS Enhancement-mod 4.4. Size:411K _toshiba 2SK2845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2845 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 8.0? (typ.) High forward transfer admittance: Y = 0.9 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.5.
Size:425K _toshiba 2SK2842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2842 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 0.4? (typ.) (ON) High forward transfer admittance: Y = 9.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 500 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.6. Size:411K _toshiba 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2847 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 1.1?
(typ.) (ON) High forward transfer admittance: Y = 7.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) 4.7. Size:43K _sanken-ele 2SK2848 External dimensions 1. FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25?C) (Ta = 25?C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 600 V I = 100µA, V = 0V (BR) DSS D GS V 600 V DSS I ±100 nA V = ±30V GSS GS V ±30 V GSS I 100 µA V = 600V, V = 0V DSS DS GS I ±2A D V 2.0 3.0 4.0 V V = 10V, I = 250µA TH DS D I ±8 A D (pulse).
In 1988, the gene responsible for the autosomal recessive disease ataxia- telangiectasia (A-T) was localized to 11q22.3-23.1. Dreamcast emulator bios. It was eventually cloned in 1995. Many independent laboratories have since demonstrated that in replicating cells, ataxia telangiectasia mutated (ATM) is predominantly a nuclear protein that is involved in the early recognition and response to double-stranded DNA breaks.
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0024__ NPN un PNP tranzistora testeris - var pārbaudīt neizlodētas detaļas = kp103 mp42b d9. INFO analogi: INFO cena padomju rubļos 1987.
MOSFET Cross-Reference Search 2SK2843 Datasheet (PDF) 1.1. Size:411K _toshiba 2SK2843 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2843 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 0.54?
(typ.) (ON) High forward transfer admittance: Y = 9.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 600 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.1. Size:408K _toshiba 2SK2846 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2846 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 4.2? (typ.) (ON) High forward transfer admittance: Y = 1.7 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 600 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 4.2. Size:417K _toshiba 2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2841 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) High forward transfer admittance: Yfs = 8.0 S (typ.) Low leakage current: IDSS = 100?A (max) (VDS = 400 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 4.3. Size:426K _toshiba 2SK2844 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2844 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance: R = 16 m?
(typ.) DS (ON) High forward transfer admittance: Y = 26 S (typ.) fs Low leakage current: IDSS = 100 µA (max) (V = 30 V) DS Enhancement-mod 4.4. Size:411K _toshiba 2SK2845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2845 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 8.0? (typ.) High forward transfer admittance: Y = 0.9 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.5.
Size:425K _toshiba 2SK2842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2842 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 0.4? (typ.) (ON) High forward transfer admittance: Y = 9.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 500 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.6. Size:411K _toshiba 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2847 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 1.1?
(typ.) (ON) High forward transfer admittance: Y = 7.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) 4.7. Size:43K _sanken-ele 2SK2848 External dimensions 1. FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25?C) (Ta = 25?C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 600 V I = 100µA, V = 0V (BR) DSS D GS V 600 V DSS I ±100 nA V = ±30V GSS GS V ±30 V GSS I 100 µA V = 600V, V = 0V DSS DS GS I ±2A D V 2.0 3.0 4.0 V V = 10V, I = 250µA TH DS D I ±8 A D (pulse).
In 1988, the gene responsible for the autosomal recessive disease ataxia- telangiectasia (A-T) was localized to 11q22.3-23.1. Dreamcast emulator bios. It was eventually cloned in 1995. Many independent laboratories have since demonstrated that in replicating cells, ataxia telangiectasia mutated (ATM) is predominantly a nuclear protein that is involved in the early recognition and response to double-stranded DNA breaks.
...'>Analogi Tranzistora K2645(11.03.2019)0024__ NPN un PNP tranzistora testeris - var pārbaudīt neizlodētas detaļas = kp103 mp42b d9. INFO analogi: INFO cena padomju rubļos 1987.
MOSFET Cross-Reference Search 2SK2843 Datasheet (PDF) 1.1. Size:411K _toshiba 2SK2843 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2843 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 0.54?
(typ.) (ON) High forward transfer admittance: Y = 9.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 600 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.1. Size:408K _toshiba 2SK2846 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2846 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 4.2? (typ.) (ON) High forward transfer admittance: Y = 1.7 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 600 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 4.2. Size:417K _toshiba 2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2841 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) High forward transfer admittance: Yfs = 8.0 S (typ.) Low leakage current: IDSS = 100?A (max) (VDS = 400 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 4.3. Size:426K _toshiba 2SK2844 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2844 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance: R = 16 m?
(typ.) DS (ON) High forward transfer admittance: Y = 26 S (typ.) fs Low leakage current: IDSS = 100 µA (max) (V = 30 V) DS Enhancement-mod 4.4. Size:411K _toshiba 2SK2845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2845 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 8.0? (typ.) High forward transfer admittance: Y = 0.9 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.5.
Size:425K _toshiba 2SK2842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2842 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 0.4? (typ.) (ON) High forward transfer admittance: Y = 9.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 500 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.6. Size:411K _toshiba 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2847 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 1.1?
(typ.) (ON) High forward transfer admittance: Y = 7.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) 4.7. Size:43K _sanken-ele 2SK2848 External dimensions 1. FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25?C) (Ta = 25?C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 600 V I = 100µA, V = 0V (BR) DSS D GS V 600 V DSS I ±100 nA V = ±30V GSS GS V ±30 V GSS I 100 µA V = 600V, V = 0V DSS DS GS I ±2A D V 2.0 3.0 4.0 V V = 10V, I = 250µA TH DS D I ±8 A D (pulse).
In 1988, the gene responsible for the autosomal recessive disease ataxia- telangiectasia (A-T) was localized to 11q22.3-23.1. Dreamcast emulator bios. It was eventually cloned in 1995. Many independent laboratories have since demonstrated that in replicating cells, ataxia telangiectasia mutated (ATM) is predominantly a nuclear protein that is involved in the early recognition and response to double-stranded DNA breaks.
...'>Analogi Tranzistora K2645(11.03.2019)